Assessment of NBTI in presence of self-heating in high-k SOI FinFETs

Macquarie University ResearchOnline

Home

List Of Titles

Add to Quick Collection

Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.14/1210814

139 Visitors

142 Hits

0 Downloads

Title: Assessment of NBTI in presence of self-heating in high-k SOI FinFETs
Related: IEEE electron device letters, Vol. 33, No. 11, (2012), p.1532-1534
DOI: 10.1109/LED.2012.2213572
Publisher: IEEE
Date: 2012
Author/Creator: Monga, Udit
Author/Creator: Khandelwal, Sourabh
Author/Creator: Aghassi, Jasmin
Author/Creator: Sedlmeir, Josef
Author/Creator: Fjeldly, Tor A
Description: We have experimentally investigated the threshold voltage shift due to negative bias temperature instability (NBTI). The NBTI stress in the absence of self-heating (SH) is performed at two different temperatures, i.e., T = 25°C and 125°C, at bias conditions: gate voltage Vgs = -2 V and drain voltage Vds = 0 V. To evaluate the effect of NBTI in the presence of SH, the stress is performed at room temperature and at Vgs = -2 V and Vds = -1 V. It has been observed that NBTI in the presence of SH causes a significant shift in the threshold voltage.
Description: 3 page(s)
Subject Keyword: FinFET
Subject Keyword: negative bias temperature instability (NBTI)
Subject Keyword: reliability
Subject Keyword: self-heating (SH)
Subject Keyword: silicon-on-insulator (SOI)
Subject Keyword: thermal resistance
Resource Type: journal article
Organisation: Macquarie University. Department of Engineering

ABN 90 952 801 237 | CRICOS Provider No 00002J