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Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92255
Description: A new large-signal HEMT drain current model is presented that accurately describes not only the AC gain and resistance of the device, but also their derivatives with respect to bias. This allows the a ... More
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244875
Description: Charge trapping effects in High Electron Mobility Transistors (HEMTs) are linked to anomalous intermodulation behavior, known as memory effects. This behavior can be observed clearly as changes in int ... More
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1165787
Description: 8 page(s)
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1245374
Description: 4 page(s)
Reviewed: Reviewed
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