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Authors:
Chen, Patrick P. -T
| Butcher, K. Scott A
| Wintrebert-Fouquet, Marie
| Wuhrer, Richard
| Phillips, Matthew R
| Prince, Kathryn E
| Timmers, Heiko
| Shrestha, Santosh K
| Usher, Brian F
Date: 2006
Subject Keyword:
030600 Physical Chemistry (incl. Structural
| band-gap
| lattice parameters
| stoichiometry
| carbon
| crystallinity
| hydrogen
| indium nitride
| nitrogen-excess
| oxygen
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15220
Description:
The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical ab
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Authors:
Butcher, K. S. A
| Wintrebert-Fouquet, Marie
| Monemar, Bo
| Chen, Patrick P.-T
| Prince, Kathryn E
| Timmers, Heiko
| Shrestha, Santosh K
| Shubina, Tatiana V
| Ivanov, Sergey V
| Wuhrer, Richard
| Phillips, Matthew R
Date: 2005
Subject Keyword:
020400 Condensed Matter Physics
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30037
Description:
It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples gro
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Date: 2005
Subject Keyword:
020400 Condensed Matter Physics
| InN, band gap
| growth rate
| carrier concentration
| Burstein-Moss effect
| oxygen incorporation
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/30173
Description:
We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical a
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Authors:
Yodo, Tokuo
| Kitayama, Yasunobu
| Miyaki, Kazunari
| Yona, Hiroaki
| Harada, Yoshiyuki
| Prince, Kathryn E
| Butcher, K Scott A
Date: 2004
Subject Keyword:
030600 Physical Chemistry (incl. Structural
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244776
Description:
We have investigated the influence of residual oxygen (O) atoms and In 2O3 grains included in 200-nm-thick hexagonal (α)-InN crystalline films grown on Si (1 1 1) substrates. (1 1 1)-oriented cubic (β
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