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Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1162368
Description: 2 page(s)
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1145444
Description: An interferometric method has been used to measure the piezoelectric coefficient d33 in indium nitride films deposited by radio-frequency sputtering on borosilicate glass coated with gold. This low te ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1228279
Description: Progress in the design of field effect transistor on heterostructure GaN/InxGa1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunn ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference poster
Identifier: http://hdl.handle.net/1959.14/119492
Description: The photoluminescence spectra and dielectric properties of diatoms, a biogenic source of porous silica, have been characterised. Results are compared with pure synthetic silica, and show low dielectri ... More
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15220
Description: The properties of indium nitride grown at various temperatures on c-plane sapphire and glass substrates, using remote plasma-enhanced chemical vapour deposition, have been investigated. The optical ab ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/15210
Description: Elastic recoil detection with swift heavy ion projectiles enables the direct and calibration-independent quantification of the N/In ratio and the impurity content of indium nitride thin films. The bea ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30052
Description: Elastic Recoil Detection analysis of different types of indium nitride films has been performed using a 200 MeV Au beam. Recoil ions were detected with a gas ionisation detector featuring a large dete ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30037
Description: It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples gro ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/30173
Description: We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical a ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30027
Description: We confirm changes to the band-gap of InN thin films treated in an electrochemical cell in which water electrolysis is evident. Electrical properties of the films were also affected. It is suggested t ... More
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244975
Description: 7 page(s)
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244735
Description: 10 page(s)
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1245229
Description: 8 page(s)
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1245466
Description: 5 page(s)
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244914
Description: 7 page(s)
Reviewed: Reviewed