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Authors: Iji, A | Zhu, X | Heimlich, M
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/216244
Description: A 1.5 V 4.5 mW 3-5 GHz low-noise amplifier (LNA) suitable for power-constraint application is implemented in a 0.25-μm silicon-on-insulator CMOS process. The designed LNA with good input and output im ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/198470
Description: A method is proposed to extract the phase constant β and attenuation constant α of bounded waves in a finite periodic structure using scattering parameters. The proposed method accounts for the mutual ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/190190
Description: A recently proposed tunable microwave periodic structure requires many switches to dynamically change its microwave propagation and radiation characteristics. The performance of a discrete Field Effec ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/180342
Description: The characteristics of each unit cell in a linearly scaled distributed HEMT model is analyzed. This provides insight into the internal behavior of any region of a whole device and hence guides optimiz ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/147837
Description: Different placement strategies for Field-Effect-Transistor (FET) active switching devices in an electromagnetic band gap (EBG) periodic structure are investigated. Two possible placements for the swit ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/198531
Description: Dynamically changing the position and width of the electromagnetic band gap of a periodic microwave structure is investigated. The one-dimensional structure consists of twenty four unit cells. It has ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/165064
Description: Effect on the electromagnetic bandgap (EBG) of an active, tunable, EBG structure, due to the insertion loss and other scattering parameters of active switching devices, is investigated. Active FET swi ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper abstract
Identifier: http://hdl.handle.net/1959.14/168686
Description: 1 page(s)
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/136043
Description: A planar, metamaterial-based, one-dimensional periodic structure that can be switched between multiple states is numerically investigated. It can be fabricated at low cost in gallium-arsenide (GaAs) t ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168672
Description: A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linea ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/119195
Description: The aim of this work is to develop a scalable small signal HEMT model. We propose a general intrinsic model unit cell to build larger transistor devices according to our need and model the metal accor ... More
Full Text: Full Text
Reviewed: Reviewed
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