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Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1209044
Description: An accurate scalable 3-D thermal finite-element-method (FEM) model is developed and verified for a GaAs pHEMT process using gate resistance thermometry (GRT) as the basis. The measurement technique is ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1195646
Description: The development of transient gate resistance thermometry (T-GRT) is reported. It is a technique used to measure the transient self-heating of a FET's gate metal. Demonstrations of T-GRT are presented ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/361389
Description: The temperature-dependent thermal conductivities of a GaAs pseudomorphic high-electron mobility transistor's (pHEMT) substrate and epilayer regions are extracted to develop a 3-D finite-element-method ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/319182
Description: The thermal impact of device bias-state and structures (such as source connected field plates, gate-pitch, back-vias, and number of gate fingers) in AlGaN/GaN-on-Si high electron mobility transistors ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/285857
Description: A thermal resistance measurement technique which exploits the thermal response of a GaAs pHEMT's gate metal resistance is examined. It is found that gate leakage (hole) current due to impact ionizatio ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/269712
Description: Gate junction temperature is presented as the crucial parameter for modeling thermal degradation in GaAs device reliability studies, and sufficient for modeling the impact of temperature on device ter ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/285933
Description: A pulsed I-V thermal resistance Rth measurement method is formulated and applied on-wafer to a GaAs MMIC pHEMT. An investigation of device dispersion phenomena assesses their impact on the measurement ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1172531
Description: The ability to monitor environmental conditions is crucial to research in fields ranging from climate variability to agriculture and zoology. Being able to document baseline and changing environmental ... More
Reviewed: Reviewed
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