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Date: 2012
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/175919
Description: For some InN films large amounts of excess nitrogen are seen at low growth temperatures. Recent studies have revised downward the defect formation energies for several forms of nitrogen rich point-def ... More
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Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30052
Description: Elastic Recoil Detection analysis of different types of indium nitride films has been performed using a 200 MeV Au beam. Recoil ions were detected with a gas ionisation detector featuring a large dete ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30037
Description: It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples gro ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/30173
Description: We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical a ... More
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Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30027
Description: We confirm changes to the band-gap of InN thin films treated in an electrochemical cell in which water electrolysis is evident. Electrical properties of the films were also affected. It is suggested t ... More
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