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Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/41912
Description: We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resist ... More
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Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/14911
Description: AlₓGa₁−ₓSb films in the regime 0 ≤ x ≤ 0.30 have been grown by metalorganic chemical vapor deposition on GaAs and GaSb substrates using TMAl, TMGa and TMSb precursors. We report the effects of growth ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/47466
Description: A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47439
Description: A dominating donor-acceptor pair (DAP) emission at about 3.27 eV is observed in the photoluminescence and cathodoluminescence spectra of intentionally undoped mass-transport (MT)-grown GaN, while only ... More
Reviewed: Reviewed
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