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Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47439
Description: A dominating donor-acceptor pair (DAP) emission at about 3.27 eV is observed in the photoluminescence and cathodoluminescence spectra of intentionally undoped mass-transport (MT)-grown GaN, while only ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27024
Description: An InP/ln₀.₅₃Ga₀.₄₇As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An In₀.₅₃Ga₀.₄₇As ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27110
Description: The extent of oxidation and growth derived oxygen contamination for Al₀.₀₅Ga₀.₉₅Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spec ... More
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Reviewed: Reviewed
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