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Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/175747
Description: In previous research we introduced an experimental methodology in which focused-ion-beam (FIB) sectioning, followed by secondary ion (SI) and secondary electron (SE) imaging, was used for testing the ... More
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Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/215496
Description: High-resolution x-ray diffraction with diamond-anvil cells, using argon as a quasi-hydrostatic pressure medium, documents the crystal structure and equation of state of osmium to over 60 GPa at room t ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/296524
Description: Sapphire films with various dopant concentrations of both neodymium and ytterbium ions were grown by the pulsed laser deposition method. Reflection high energy electron diffraction and X-ray diffracti ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1227859
Description: The GaSb-based material system is attractive for application in photovoltaic (PV) cells since its band gap can be tuned to match the radiation of the emitter. At present, most of the PV cells are fabr ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1227838
Description: Focussed ion beam milling, combined with secondary ion and secondary electron imaging, has been used to evaluate the internal homogeneity of silica glass microspheres. Internal inhomogeneities that wi ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/164970
Description: Nanostructures have become a topic of increasing interest due to their fundamental properties and possible device applications. One method of fabrication that is receiving much attention lately is the ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/215433
Description: X-ray diffraction from LaB₆ standards document a precision of 478 ppm in lattice-parameter determinations for beamline 12.2.2 at Lawrence Berkeley National Laboratory′s Advanced Light Source, a facili ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244574
Description: 5 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244557
Description: 10 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1228279
Description: Progress in the design of field effect transistor on heterostructure GaN/InxGa1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunn ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/73679
Description: Background. Laser tissue repair usually relies on haemoderivate solders, based on serum albumin. These solders have intrinsic limitations that impair their widespread use, such as limited repair stren ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/101104
Description: We have used a combination of profilometry, high speed imaging and recoil measurements using a ballistic pendulum to calculate the amount of material removed due to mechanisms of vaporisation, melt di ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/47466
Description: A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/30173
Description: We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical a ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244961
Description: 4 page(s)
Reviewed: Reviewed