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Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1145444
Description: An interferometric method has been used to measure the piezoelectric coefficient d33 in indium nitride films deposited by radio-frequency sputtering on borosilicate glass coated with gold. This low te ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1228279
Description: Progress in the design of field effect transistor on heterostructure GaN/InxGa1-xN is reported in this paper. The transistor uses new principle for modulation of the channel conductivity based on tunn ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30052
Description: Elastic Recoil Detection analysis of different types of indium nitride films has been performed using a 200 MeV Au beam. Recoil ions were detected with a gas ionisation detector featuring a large dete ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30037
Description: It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples gro ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/30173
Description: We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical a ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30027
Description: We confirm changes to the band-gap of InN thin films treated in an electrochemical cell in which water electrolysis is evident. Electrical properties of the films were also affected. It is suggested t ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/43277
Description: We present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride film ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27033
Description: Only very few compositional surface and bulk studies of InN have been performed. It is known that there is a strong oxide presence on the surface of InN. We used a high sensitivity, high resolution X- ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/33140
Description: The highest mobility nitrides ever grown were indium nitride polycrystalline thin films. The original reactive ion sputtering unit used to produce those films is still in existence and has been substa ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/31883
Description: Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride e ... More
Reviewed: Reviewed
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