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Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/130859
Description: The nature of the apparent band-gap shift in polycrystalline indium nitride thin-films, grown by remote-plasma-enhanced chemical vapour deposition at 535 ± 10 °C, has been investigated separately in r ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/22954
Description: Gallium nitride and indium nitride films have been grown by remote plasma enhanced chemical vapor deposition (RPECVD) at temperatures between 570 and 650 °C for GaN and between 350 and 570 °C for InN ... More
Reviewed: Reviewed
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