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Authors: Parker, Anthony
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244351
Description: Field Effect Transistors exhibit a variety of complicated dynamic and nonlinear interactions that affect millimetre-wave devices used for telecommunications. The dynamics include self heating, bias de ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1229358
Description: We present a novel and simple model of FET trapping based on a study of HEMTs using pulse techniques. This model accounts for the observed variation of extent of gate lag with bias and step potentials ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244278
Description: 11 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244069
Description: For integrated circuit design up to 50GHz and beyond accurate models of the transistor access structures and intrinsic structures are necessary for prediction of circuit performance. The circuit desig ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244529
Description: This paper investigates up/down conversion asymmetry in intermodulation distortion observed in measurements of resistive FET mixers. Symmetric behaviour is intuitively expected of such a topology, so ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244235
Description: This work investigates the nature of the nonlinearities in an anti-parallel combination of Schottky diodes, which is often used as a frequency converting device or a mixer. An anti-parallel Schottky d ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244634
Description: The evolution of wide-bandgap semiconductor transistor technology is placed in historical context with other active device technologies. The relative rapidity of GaN transistor development is noted an ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92350
Description: Anti-parallel diode pair mixers offer the benefit of intermodulation nulling without conversion nulls. However, the practicality of intermodulation nulling in improving mixer distortion performance is ... More
Full Text: Full Text
Reviewed: Reviewed
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