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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1196080
Description: A circuit implementation of a single-energy-level trap center in an FET is presented. When included in transistor models it explains the temperature-potential-dependent time constants seen in the circ ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1202617
Description: A difficulty concerning characterization of charge trapping in microwave FETs by performing pulse measurements is the possible overlap between the trapping and self-heating rates. Another difficulty i ... More
Reviewed: Reviewed
Date: 2001
Language: eng
Resource Type: book chapter
Identifier: http://hdl.handle.net/1959.14/102708
Description: The article discusses dispersion in the dynamic characteristics of microwave HEMTs, and the application of a pulsed-bias measurement system. Thermal effects and non-thermal effects are analysed
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