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Date: 2017
Subject Keyword: compact model | halo | transconductance
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1210928
Description: In this paper, we report anomalous behavior of transconductance(gm) in halo implanted MOSFET for linear and saturation regions across both gate and body biases. The gm characteristics undergo sharp ch ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208194
Description: In this paper, flicker noise behavior of lateral non-uniformly doped MOSFET is studied using impedance field method. Our study shows that Klaassen Prins (KP) method, which forms the basis of noise mod ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1217760
Description: In this paper, self-consistent three-dimensional (3D) device simulations for exact analysis of thermal transport in FinFETs are performed. We analyze the temperature rise in FinFET devices with the va ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207273
Description: We present a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation. The subsurface leakage current is mainly caused by source-drain coupling, leading to carriers surm ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207204
Description: The channel in Fully Depleted Silicon On Insulator (FDSOI) transistors is completely isolated from the substrate via buried oxide (BOX) and from the sides by shallow trench isolations, which results i ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206785
Description: In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | MOSFET | SPICE | threshold voltage
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211156
Description: In this paper, an analytical model of threshold voltage for bulk MOSFET is developed. The model is derived from the physical charge-based core of BSIM6 MOSFET model, taking into account short channel ... More
Reviewed: Reviewed
Date: 2015
Subject Keyword: BSIM6 | halo doping | flicker noise | compact model
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1211315
Description: An improved analytical model for flicker noise (1/f noise) in MOSFETs is presented. Current models do not capture the effect of high-trap density in the halo regions of the devices, which leads to sig ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206766
Description: We enhance the capability of industry standard compact model BSIM6 to model the parasitic current Iedge at the shallow trench isolation edge. Accurate, efficient, and scalable model for Iedge is devel ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207209
Description: In this work, we have modeled the impact of substrate depletion in fully-depleted silicon-on-insulator (FDSOI) transistor and have extensively verified the model for both NMOS and PMOS with geometrica ... More
Reviewed: Reviewed
Date: 2014
Subject Keyword: analog | BSIM4 | BSIM6 | compact model | RF
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207494
Description: BSIM6 is the latest industry-standard bulk MOSFET model from the BSIM group developed specially for accurate analog and RF circuit designs. The popular real-device effects have been brought from BSIM4 ... More
Reviewed: Reviewed
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