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Date: 2017
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207300
Description: A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to overcome the challenge of integration. This provides the flexibility to use Wentzel-Kramers-Brillouin under spa ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207273
Description: We present a phenomenological model for subsurface leakage current in MOSFETs biased in accumulation. The subsurface leakage current is mainly caused by source-drain coupling, leading to carriers surm ... More
Reviewed: Reviewed
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