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Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/326772
Description: GaN HEMTs are widely used in switching power amplifiers topologies to achieve high power density at very high frequencies due to the enhanced power handling capabilities provided by the SiC substrate ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/303408
Description: Commercial foundry 0.25μm RF GaN MMICs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/284550
Description: RF GaN HEMTs were characterized as power switches using pulsed IV system. The devices exhibited current collapse and ON resistance modulation. These trap effects were highly dependent on off state qui ... More
Reviewed: Reviewed
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