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Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/16153
Description: The grain size for polycrystalline GaN, grown in low-temperature gallium-rich conditions, is shown to be correlated to the oxygen content of the films. Films with lower oxygen content were observed to ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/31883
Description: Because of its high mobility, indium nitride is emerging as a “hot” material for potential application in nitride based high power, high frequency transistor devices. The best quality indium nitride e ... More
Reviewed: Reviewed
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