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Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1070126
Description: We have demonstrated phase sensitive detectors of coherent terahertz radiation that use single nanowires as active elements. The single GaAs/AlGaAs nanowires acted as sensitive photoconductive element ... More
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1051586
Description: Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetectio ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1051946
Description: Spectroscopy and imaging in the terahertz (THz) region of the electromagnetic spectrum has proven to provide important insights in fields as diverse as chemical analysis, materials characterization, s ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1070595
Description: Photoconductive terahertz detectors based on single GaAs/AlGaAs nanowire were designed, fabricated and incorporated into the pulsed time-domain technique, showing a promise for nanowires in terahertz ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1071266
Description: We report an analysis method that combines microphotoluminescence mapping and lifetime mapping data of single semiconductor nanowires to extract the doping concentration, nonradiative lifetime, and in ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1051962
Description: A hierarchical nano- and microstructured morphology for visible-blind UV photo-detectors is developed, which provides record-high milliampere photocurrents, nanoampere dark currents, and excellent sel ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1033169
Description: We report the growth of stacking-fault-free and taper-free wurtzite InP nanowires with diameters ranging from 80 to 600 nm using selective-area metal-organic vapor-phase epitaxy and experimentally det ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47442
Description: Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, ... More
Reviewed: Reviewed
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