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Date: 2016
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1213345
Description: The frequency range 25-45 GHz contains point-to-point bands at 28, 32, 38 and 42 GHz, potential implementation of 5G at 28 and 39 GHz and various military applications. Traditionally, short gate lengt ... More
Reviewed: Reviewed
Date: 2014
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/331575
Description: Direct down-conversion receivers at Ka band in GaAs and SiGe are measured and analysed with particular attention to linearity. The GaAs receiver is observed to have the superior overall linearity alth ... More
Reviewed: Reviewed
Date: 2013
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/267325
Description: A GaAs pHEMT radio chip-set, consisting of receiver, up-converter and power amplifier, for E-band applications demonstrates excellent conversion gain, linearity and output power over the entire 15 GHz ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/198379
Description: A GaAs pHEMT frequency doubler, a quadrupler and a power amplifier for E-band applications have been demonstrated to achieve useful output power and power added efficiency (PAE) over a wide bandwidth. ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167702
Description: Accurately measured low frequency noise and correlation of GaAs based Heterojunction Bipolar Transistors (HBTs) have been reported between 10 Hz and 100 kHz. The system noises were removed from the da ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168666
Description: GaAs based heterojunction bipolar transistors are used in microwave oscillators to provide low phase noise operation. Prediction of phase noise requires transistor models to be accurate at low frequen ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168663
Description: Self heating in GaAs based heterojunction bipolar transistors affect the microwave performance and needs to be taken into account in circuit design. It can be modeled by the addition of a thermal impe ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1228119
Description: 4 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244235
Description: This work investigates the nature of the nonlinearities in an anti-parallel combination of Schottky diodes, which is often used as a frequency converting device or a mixer. An anti-parallel Schottky d ... More
Reviewed: Reviewed
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