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Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/180342
Description: The characteristics of each unit cell in a linearly scaled distributed HEMT model is analyzed. This provides insight into the internal behavior of any region of a whole device and hence guides optimiz ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/167646
Description: A HEMT model is proposed that correctly isolates the access metallization from the intrinsic device to give linear scalability. The model uses a distributed network of intrinsic unit cells composed of ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168672
Description: A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linea ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/119195
Description: The aim of this work is to develop a scalable small signal HEMT model. We propose a general intrinsic model unit cell to build larger transistor devices according to our need and model the metal accor ... More
Full Text: Full Text
Reviewed: Reviewed
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