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Date: 2015
Subject Keyword: w-band | GaAs | MMIC | amplifiers
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1061703
Description: The technology, design aspects and performance of a family of three compact W-band power amplifier MMICs are presented. The circuits are fabricated in a commercially available 0.1-μm GaAs PHEMT techno ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1061629
Description: The design and performance of a miniaturized broadband up-converter MMIC is presented. The circuit is designed to operate as an harmonic FET mixer with an output frequency ranging from 40 to 160 GHz. ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1061663
Description: We report on the development and performance of a very compact GaAs Power Amplifier MMIC for E-band communication systems. With a remarkably small chip size of only 3.7 mm2, this amplifier achieves a ... More
Reviewed: Reviewed
Date: 2012
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/180342
Description: The characteristics of each unit cell in a linearly scaled distributed HEMT model is analyzed. This provides insight into the internal behavior of any region of a whole device and hence guides optimiz ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/168672
Description: A distributed model of GaAs pHEMT and scaling technique is analyzed. The concept of unit cell is employed to demonstrate the model. The intrinsic and extrinsic parameters of the unit cell scaled linea ... More
Reviewed: Reviewed
Date: 2010
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/117903
Description: Correct measurement of low frequency noise in a transistor requires prior knowledge of its s-parameters but the measurement of s-parameters at very low frequencies are difficult due to long time const ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2001
Language: eng
Resource Type: newspaper article
Identifier: http://hdl.handle.net/1959.14/102720
Description: The paper briefly reviews commonly used attenuator topologies. The requirements of an FET I-V model for nonlinear simulation of attenuator circuits are stated. An improved MESFET/HEMT I-V model is the ... More
Authors: Qu, G | Parker, A. E
Date: 2000
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/92749
Description: The significance of the nonlinearity of HEMT capacitance models to the prediction of intermodulation is investigated. Three capacitance models, one linear and two with contrasting nonlinear behavior, ... More
Reviewed: Reviewed
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