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Date: 2017
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207300
Description: A predictive tunnel FET compact model is proposed. Gaussian quadrature method is used to overcome the challenge of integration. This provides the flexibility to use Wentzel-Kramers-Brillouin under spa ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207708
Description: We present an accurate and computationally efficient physics-based compact model to quantitatively analyze negative capacitance FET (NCFET) for real circuit design applications. Our model is based on ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207727
Description: In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelec ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206756
Description: We report subthreshold swings as low as 8.5 mV/decade over as high as eight orders of magnitude of drain current in short-channel negative capacitance FinFETs (NC-FinFETs) with gate length Lg = 100 nm ... More
Reviewed: Reviewed
Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1206785
Description: In this letter, we present a unified compact model, which accurately captures carrier transport from the drift-diffusion to ballistic regime. This is a single unified model, which accounts for carrier ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1207009
Description: In this letter, we model future generation SiGe FinFETs using the industry standard compact model BSIM-CMG. BSIM-CMG is enhanced to model these aggressively scaled devices. It is found that in these n ... More
Reviewed: Reviewed
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