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Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/102724
Description: This article presents the winning power amplifier implemented with a gallium nitride (GaN) high electron mobility transistor (HEMT) and having power-added efficiency (PAE) greater than 85%. It will be ... More
Date: 2001
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/102709
Description: A new model of the second- and third-order intermodulation products from HEMT and MESFET small-signal amplifiers, resulting from nonlinear drain-source current has been proposed in our previous public ... More
Reviewed: Reviewed
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