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Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47442
Description: Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27024
Description: An InP/ln₀.₅₃Ga₀.₄₇As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An In₀.₅₃Ga₀.₄₇As ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27013
Description: InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased ... More
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Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/40861
Description: A high-resolution, high-sensitivity VG x-ray photoelectron spectrometer was used to study a semiconductor layer structure grown for the fabrication of resonant tunneling bipolar transistor devices. De ... More
Reviewed: Reviewed
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