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Date: 2016
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1208250
Description: In this paper, we have proposed a new analytical model for FETs working in the quasi-ballistic regime. The model is based on a calculation of the charge density along the channel which is then used to ... More
Reviewed: Reviewed
Date: 2015
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1051586
Description: Antimonide-based ternary III-V nanowires (NWs) allow for a tunable bandgap over a wide range, which is highly interesting for optoelectronics applications, and in particular for infrared photodetectio ... More
Reviewed: Reviewed
Date: 2011
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/160260
Description: Despite the rapidly growing interest in Ge for ultrascaled classical transistors and innovative quantum devices, the field of Ge nanoelectronics is still in its infancy. One major hurdle has been elec ... More
Reviewed: Reviewed
Date: 2008
Subject Keyword: ITO | core-shell | nanowire | DSSCs
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1114488
Description: The concept of growing ITO (Indium-Tin-oxide) or ITO/TiO₂ core-shell nanowire arrays for the use of 3D electrodes in dye-sensitized solar cells (DSSCs) has been tested in the present study. By employi ... More
Reviewed: Reviewed
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