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Date: 2006
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47442
Description: Stacked self-assembled In0.5Ga0.5As/GaAs quantum dot infrared photodetectors grown by low-pressure metal-organic chemical vapor deposition, with and without silicon dopants in the quantum dot layers, ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47425
Description: Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the co ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27024
Description: An InP/ln₀.₅₃Ga₀.₄₇As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An In₀.₅₃Ga₀.₄₇As ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27013
Description: InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased ... More
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Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27110
Description: The extent of oxidation and growth derived oxygen contamination for Al₀.₀₅Ga₀.₉₅Sb grown by metalorganic chemical vapour deposition (MOCVD) were systematically investigated by X-ray photoelectron spec ... More
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Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26697
Description: Growth of microcrystalline GaN films by microwave plasma assisted laser-induced chemical vapour deposition has been studied in the temperature range of 525°C - 650°C for growth on sapphire and silicon ... More
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Reviewed: Reviewed
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