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Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/16153
Description: The grain size for polycrystalline GaN, grown in low-temperature gallium-rich conditions, is shown to be correlated to the oxygen content of the films. Films with lower oxygen content were observed to ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/26719
Description: Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layer. The high compliance of the ZnO has allowed r ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/40380
Description: Remote plasma enhanced-laser-induced chemical vapor deposition was used to grow gallium nitride films on zinc oxide buffer layers deposited by atomic layer epitaxy on soda lime glass. Freestanding lay ... More
Reviewed: Reviewed
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