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Date: 2004
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/107769
Description: Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The ... More
Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/29457
Description: In-plane- and depth-resolved cathodoluminescence (CL) microanalysis and spectroscopy was carried out to study the impact of electron injection on electro-migration and diffusion of native defects and ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47419
Description: The effect of low-energy electron beam irradiation (LEEBI) on residual hydrogen impurities and native defects in activated metalorganic vapor phase epitaxy-grown Mg-doped (p-type) GaN layers was studi ... More
Reviewed: Reviewed
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