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Date: 2005
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/47466
Description: A comprehensive study of the donor-acceptor pair (DAP) luminescence band in mass-transport grown GaN in wide ranges of temperature and excitation conditions was performed. Based on spatially resolved ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47439
Description: A dominating donor-acceptor pair (DAP) emission at about 3.27 eV is observed in the photoluminescence and cathodoluminescence spectra of intentionally undoped mass-transport (MT)-grown GaN, while only ... More
Reviewed: Reviewed
Date: 2004
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/107769
Description: Post-growth annealing and electron beam irradiation during cathodoluminescence were used to determine the chemical origin of the main optical emission lines in moderately and heavily Mg-doped GaN. The ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/82014
Description: This erratum is for an article that appeared in Journal of applied physics, Vol. 90, Issue 12, pg. 6011-6016, and may be found at http://dx.doi.org/10.1063/1.1415363.
Reviewed: Reviewed
Date: 2001
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/82008
Description: Thick hydride vapor phase epitaxial GaN layers are grown on metalorganic chemical vapor deposited GaN template layers as well as directly on sapphire, with the aim of investigating the effect of the t ... More
Reviewed: Reviewed
Date: 2001
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47420
Description: We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5×10¹⁷-1×10²⁰cm⁻³. The influence of s ... More
Reviewed: Reviewed
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