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Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27013
Description: InN is now one of the hottest materials in the world. Interest stems from the potential for the development of the next generation of mobile communication hardware. International research is increased ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/17552
Description: The band-gap of indium nitride has long been believed to be about 1.9eV with slight variations due to band-tailing in polycrystalline samples and degenerate doping. Recently, other values as low as 0. ... More
Reviewed: Reviewed
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