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Date: 2003
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27100
Description: ZnO layers have been grown by atomic layer epitaxy using a gas flow version of the technique. ZnO films have been obtained from either a double exchange chemical reaction, a single exchange reaction, ... More
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Reviewed: Reviewed
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/29412
Description: Cathodoluminesence (CL) studies were performed for GaSb self-assembled quantum dots grown by atmospheric pressure metalorganic chemical vapour deposition on GaAs substrates. The evolution of quantum d ... More
Reviewed: Reviewed
Date: 2003
Subject Keyword: 091200 Materials Engineering
Language: eng
Resource Type: book chapter
Identifier: http://hdl.handle.net/1959.14/27336
Description: We summaries the status of laser assisted chemical vapour deposition used for growth of GaN films. The principles behind the growth technique are discussed together with the characteristics of the res ... More
Date: 2003
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/29437
Description: A mutilayer structure of self-assembled GaSb/GaAs quantum dots (QDs) has been grown for the first time by metalorganic chemical vapor deposition (MOCVD) in the Stranski–Krastanow (S–K) growth mode. Ev ... More
Reviewed: Reviewed
Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27178
Description: Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emissi ... More
Reviewed: Reviewed
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