Macquarie University, Sydney Macquarie University ResearchOnline

Showing items 106 - 120 of 187.

Add to Quick Collection   All 187 Results

Sort:
 Add All Items to Quick Collection
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/81011
Description: Fabrication of single nickel-nitrogen (NE8) defect centers in diamond by chemical vapor deposition is demonstrated. Under continuous-wave 745 nm laser excitation single defects were induced to emit si ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/140987
Description: Single defect centers in diamond have been generated via nitrogen implantation. The defects have been investigated by single defect center fluorescence microscopy. Optical and electron paramagnetic re ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30698
Description: In this work we evaluate structural and optical properties of ZnO nanoparticles grown by wet chemistry method. Light emission properties of these nanoparticles are studied with cathodoluminescence and ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47425
Description: Multilayer GaSb/GaAs quantum-dot (QD) structures grown by atmospheric-pressure metalorganic chemical vapor deposition on semi-insulating GaAs (100) substrates with varying growth temperature of the co ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30718
Description: Effects of n-type doping of GaN epilayers and InGaN/GaN quantum well structures are studied. We evaluate the influence of n-type doping on a structural quality of the samples (using atomic force and s ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1155267
Description: 37 page(s)
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1130879
Description: 4 page(s)
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30052
Description: Elastic Recoil Detection analysis of different types of indium nitride films has been performed using a 200 MeV Au beam. Recoil ions were detected with a gas ionisation detector featuring a large dete ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30037
Description: It is shown that the wide variation of apparent band-gap observed for thin films nominally referred to as InN is strongly influenced by variations in the nitrogen:indium stoichiometry. InN samples gro ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30007
Description: We demonstrate that nonstoichiometry is one of the main reason of strong deviation of the InN optical gap in the 0.7–2 eV range, with N/In < 1 and N/In > 1 corresponding to the lower and higher energi ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/30173
Description: We have investigated the properties of indium nitride (InN) grown at various temperatures on c-plane sapphire substrates using remote plasma enhanced chemical vapour deposition (RPECVD). The optical a ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30032
Description: The novel use of resonant Raman spectroscopy to elucidate the band gap of InN is illustrated in a study of MBE-grown films. This technique can distinguish between electronic transitions related to the ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/30027
Description: We confirm changes to the band-gap of InN thin films treated in an electrochemical cell in which water electrolysis is evident. Electrical properties of the films were also affected. It is suggested t ... More
Reviewed: Reviewed
Date: 2005
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1158556
Description: 5 page(s)
Reviewed: Reviewed