Macquarie University, Sydney Macquarie University ResearchOnline

Showing items 46 - 60 of 187.

Add to Quick Collection   All 187 Results

Sort:
 Add All Items to Quick Collection
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1154301
Description: We present a novel method for profiling high aspect ratio and undercut laser drilled holes using sacrificial layers. This profiling method is used to compare and contrast laser ablation of polyethylen ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244574
Description: 5 page(s)
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/313305
Description: We report on local photo-induced oxidation of porous silicon in water at room temperature. Starting from a nonluminescent sample, the oxidation process induces luminescence which was found to first in ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1145444
Description: An interferometric method has been used to measure the piezoelectric coefficient d33 in indium nitride films deposited by radio-frequency sputtering on borosilicate glass coated with gold. This low te ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/140993
Description: We map out the first excited state sublevel structure of single nitrogen-vacancy (NV) colour centres in diamond. The excited state is an orbital doublet where one branch supports an efficient cycling ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/313336
Description: We use a stochastic model to study photoinduced surface relief grating (SRG) formation due to molecular transport in azobenzene polymer films. The model is shown to reproduce the essential experimenta ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/140990
Description: Photon interference among distant quantum emitters is a promising method to generate large scale quantum networks. Interference is best achieved when photons show long coherence times. For the nitroge ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1243860
Description: 3 page(s)
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/298019
Description: The Rabi oscillation of the thin bulk semiconductor GaAs, which takes into account the effect of the local-field correction induced by the interacting excitons, is investigated by numerically solving ... More
Reviewed: Reviewed
Date: 2008
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/296496
Description: This letter focuses on epitaxial growth of a 1-μm-thick lattice matched Nd-doped monocrystalline (Gd,Lu)₂O₃ film deposited on a {100} oriented Y₂O₃ substrate by pulsed laser deposition. Layer-by-layer ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/23344
Description: The O K-LL spectrum from a SiO₂ surface was measured in coincidence with O 1s photoemission in SiO₂. The coincidence lineshapes are compared to the simultaneously obtained conventional Auger lineshape ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/41912
Description: We investigate the electronic band structure of two of the rare-earth nitrides, DyN and SmN. Resistivity measurements imply that both materials have a semiconducting ground state, and both show resist ... More
Full Text: Full Text
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/148646
Description: Dielectric susceptibilities of the following semiconductors for electromagnetic field of zero frequency are investigated: InN, GaN, AlN, InxGa1-xN, InxAl1-xN, InN containing oxygen, and non-stoichiome ... More
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/1244557
Description: 10 page(s)
Reviewed: Reviewed
Date: 2007
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/1132591
Reviewed: Reviewed