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Date: 2002
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/27178
Description: Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emissi ... More
Reviewed: Reviewed
Date: 2001
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/82008
Description: Thick hydride vapor phase epitaxial GaN layers are grown on metalorganic chemical vapor deposited GaN template layers as well as directly on sapphire, with the aim of investigating the effect of the t ... More
Reviewed: Reviewed
Date: 2001
Language: eng
Resource Type: journal article
Identifier: http://hdl.handle.net/1959.14/47420
Description: We simulate the spectral distribution of the free-electron recombination band in optical emission spectra of GaN with a free-carrier concentration in the range of 5×10¹⁷-1×10²⁰cm⁻³. The influence of s ... More
Reviewed: Reviewed