Polycrystalline GaN has been grown by remote plasma enhanced laser induced chemical vapour deposition on soda lime glass substrates using ZnO buffer layer. The high compliance of the ZnO has allowed relatively thick layers of 5-10 microns to be produced on these inexpensive substrate materials. These were subsequently processed into free standing layers. Hall mobilities have been measured for N-type GaN deposited on the ZnO buffered glass substrates, with the results equalling the highest values obtained by others using MBE and high purity silica substrates.
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