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Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92248
Description: Small-signal microwave transistor characteristics are used to construct and fit a comprehensive model of their dynamic behaviour. The model includes thermal effects and trap-related effects, which inf ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92251
Description: Traps at the surface of devices cause delayed response of drain current to a step change of gate voltage. This is known as gate lag. Gate lag is usually caused by surface hole trapping. Traps at the s ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92245
Description: A measurement system that enables next generation broadband communications systems is described. The measurements are fully calibrated and are traceable to the national standards laboratories. The sys ... More
Reviewed: Reviewed
Date: 2006
Language: eng
Resource Type: conference paper
Identifier: http://hdl.handle.net/1959.14/92255
Description: A new large-signal HEMT drain current model is presented that accurately describes not only the AC gain and resistance of the device, but also their derivatives with respect to bias. This allows the a ... More
Reviewed: Reviewed
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